IGBT-Energiespeichergerät
IGBT 专栏 IGBT 当前的新能源车的模块系统由很多部分组成,如电池、VCU、BSM、电机等,但是这些都是发展比较成熟的产品,国内外的模块厂商已经开发了很多,但是有一个模块需要引起行业内的重视,那就是电机驱动部分,则是电机驱动部分最核心的元件IGBT(Insulated Gate Bipolar
What is an IGBT (Insulated gate bipolar transistor)?
ST offers a comprehensive portfolio of IGBTs (Insulated Gate Bipolar Transistors) optimized for diverse application needs, such as industrial and automotive. Ranging from 300 to more than 1200 V, the IGBT devices are available as bare die as well as packaged discrete components. IGBTs are belonging to the STPOWER™ family.
What is an IGBT transistor?
The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.
What is an IGBT switch?
The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. The IGBT is used in medium- to high-power applications like switched-mode power supplies, traction motor control and induction heating.
What is IGBT used for?
The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation. The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.
What is a power IGBT?
ST offers an extensive range of Power IGBTs for any voltage range in industrial and automotive applications. Used as coil drivers for high-performance car ignition systems, these IGBTs are available in different clamp voltages (with typical values ranging from 350 to 410 V) and current levels ( from 10 to 30 A).
Why is IGBT a good power electronic device?
As a power electronic device, the IGBT is optimized for high switching speeds. Operating it in linear mode similar to MOSFETs in former audio amplifiers is highly undesirable. This mode of operation would lead to massively increased losses. With the output characteristics of the bipolar transistor, further features of the device result.