Lithiumbatterie-Energiespeicher IGBT
Die Aktivmaterialien sind ein entscheidender Bestandteil von Lithium-Ionen-Batteriezellen. Für die Anode verwenden moderne LIBs in der Regel eine Mischung aus graphit- und silizium-basierten Kompositen, während für die Kathode hauptsächlich Lithium-Nickel-Mangan-Kobalt-Oxide (NMC) und Lithium-Eisen-Phosphat (LFP) verwendet werden.
What is an IGBT transistor?
The most basic function of an IGBT is the fastest possible switching of electric currents, thus achieving the lowest possible switching losses. As the name “Insulated Gate Bipolar Transistor” reveals, an IGBT is a bipolar transistor with an isolated gate structure; the gate itself is basically a MOSFET.
What is an insulated-gate bipolar transistor (IGBT)?
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
What is an IGBT switch?
The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. The IGBT is used in medium- to high-power applications like switched-mode power supplies, traction motor control and induction heating.
What is IGBT used for?
The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation. The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.
Why is IGBT a good power electronic device?
As a power electronic device, the IGBT is optimized for high switching speeds. Operating it in linear mode similar to MOSFETs in former audio amplifiers is highly undesirable. This mode of operation would lead to massively increased losses. With the output characteristics of the bipolar transistor, further features of the device result.
What does IGBT stand for?
"Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics". IEEE Transactions on Reliability. 58 (2): 271–276. doi: 10.1109/TR.2009.2020134. S2CID 206772637. Wintrich, Arendt; Nicolai, Ulrich; Tursky, Werner; Reimann, Tobias (2015). Semikron (ed.).